Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-17
2007-04-17
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
10758699
ABSTRACT:
In a body of semiconductor material, a field region separates a first active area and a second active area. A drain region is formed in the first active area; a body region is formed in the second active area and accommodates a source region. A body-contact region is formed inside the source region and extends from the surface as far as the body region. An insulating layer extends on top of the surface and accommodates a plurality of metal contacts, which extend as far as the drain region, the source region and the body-contact region. The body-contact region is self-aligned to a respective contact.
REFERENCES:
patent: 6495888 (2002-12-01), Yamato
Brenna Emanuele
Di Franco Antonio
Graybeal Jackson Haley LLP
Jorgenson Lisa K.
Pham Long
Rusyn Paul F.
STMicroelectronics S.r.l.
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