DMOS architecture using low N-source dose co-driven with P-body

Details DMOS architecture using low N-source dose co-driven with P-body DMOS architecture using low N-source dose co-driven with P-body

1998-09-03

2000-05-30

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438262, 438268, H01L 218247

Patent

active

060690348

ABSTRACT:
A DMOS structure is formed with P-body and N-source implantations are self-aligned using the same photoresist mask. Following formation of field isolation structures and removal of the composite nitride, a `double-implantation` of P body and N source is made using a single resist masking stage. This process flow utilizes a relatively low N-source implantation dose, as N-source and P-body implantations are subsequently thermally diffused together (co-driven) using the original thermal budget of the P-body drive-in. The N-source implant thus now sees the same thermal budget as does the P-body implant. As a result in this process scheme, overetching of P-body and N-source during composite nitride removal is eliminated, while process simplicity is conserved. Moreover, channel overlap remains self-aligned by implanting N-source and P-body through the same mask. Differing rates of thermal diffusion of the P and N type dopant determine the extent of channel overlap.

REFERENCES:
patent: 5338693 (1994-08-01), Kinzer et al.
patent: 5340756 (1994-08-01), Nagayasu
patent: 5550072 (1996-08-01), Cacharelis et al.
patent: 5750416 (1998-05-01), Hshieh et al.
patent: 5783474 (1998-07-01), Ajit
patent: 5854099 (1998-12-01), Farrenkopf
patent: 5981343 (1999-11-01), Magri et al.
H. J. Gregory, et al., "A 0.72.mu.m Smart Power Technology using Non-Self-Aligned DMOS and Up/down-diffused HV Wells" (4 pages).

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