Disturbance-free, recipe-controlled plasma processing method

Details Disturbance-free, recipe-controlled plasma processing method Disturbance-free, recipe-controlled plasma processing method

2005-04-19

2005-04-19

Alejandro-Mulero, Luz (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S060000, C438S009000, C438S016000, C427S008000

Reexamination Certificate

active

06881352

ABSTRACT:
A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

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