Distributed microwave plasma reactor for semiconductor processin

Details Distributed microwave plasma reactor for semiconductor processin Distributed microwave plasma reactor for semiconductor processin

1997-10-09

1999-09-07

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723MW, 118723I, 118723E, 118723IR, 118723ER, 118724, 118 501, 156345, C23C 1600

Patent

active

059481684

ABSTRACT:
A plasma reactor has plural dielectric gas injection tubes extending from a gas injection source and through a microwave guide and into the top of the reactor chamber. The semiconductor wafer rests near the bottom of the chamber on a wafer pedestal connected to a bias RF power source which is controlled independently of the microwave source coupled to the microwave guide. The microwaves from the waveguide ignite and maintain a plasma in each of the tubes. Gas flow through the tubes carries the plasmas in all the tubes into the chamber and into contact with the wafer surface.

REFERENCES:
patent: 5017404 (1991-05-01), Paquet et al.
patent: 5102523 (1992-04-01), Beisswenger et al.
patent: 5496410 (1996-03-01), Fukuda et al.
patent: 5702530 (1997-12-01), Shan et al.

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