Distributed microwave plasma reactor for semiconductor processin

Details Distributed microwave plasma reactor for semiconductor processin Distributed microwave plasma reactor for semiconductor processin

1995-06-23

1997-12-30

Niebling, John

Coating apparatus

Gas or vapor deposition

With treating means

118723MW, 118723ME, 1566431, 427569, C23C 1600

Patent

active

057025304

ABSTRACT:
A plasma reactor has plural dielectric gas injection tubes extending from a gas injection source and through a microwave guide and into the top of the reactor chamber. The semiconductor wafer rests near the bottom of the chamber on a wafer pedestal connected to a bias RF power source which is controlled independently of the microwave source coupled to the microwave guide. The microwaves from the waveguide ignite and maintain a plasma in each of the tubes. Gas flow through the tubes carries the plasmas in all the tubes into the chamber and into contact with the wafer surface.

REFERENCES:
patent: 4624138 (1986-11-01), Ono et al.
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4849249 (1989-07-01), Ishihara et al.
patent: 4945857 (1990-08-01), Marinace
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5091049 (1992-02-01), Campbell et al.
patent: 5262610 (1993-11-01), Huang et al.
patent: 5269848 (1993-12-01), Nakagawa
patent: 5342472 (1994-08-01), Imahashi et al.
patent: 5496410 (1996-03-01), Fukuda et al.

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