Distributed high voltage JFET

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate

Reexamination Certificate

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C438S188000, C257SE21043

Reexamination Certificate

active

07910417

ABSTRACT:
A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.

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