Disposable spacer and method of forming and using same

Details Disposable spacer and method of forming and using same Disposable spacer and method of forming and using same

1996-11-22

2000-07-11

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438696, 438752, H01L 21336

Patent

active

06087239&

ABSTRACT:
A disposable spacer for use in a semiconductor device fabrication process is formed of a germanium-silicon alloy. The germanium-silicon alloy may include a first portion (x) of germanium and a second portion (1-x) of silicon, wherein x is greater than about 0.2. A method of forming the disposal spacer includes providing a device structure and forming a layer of germanium-silicon alloy on the device structure. The layer is then etched to form the disposable spacer. The device structure may include a substrate and a gate structure with the disposable spacers formed at sidewalls thereof. Further, the device structure may include a substrate having an oxidation mask formed thereon with the disposable spacers formed relative to sidewalls of the oxidation mask. In addition, the method includes removing the disposable spacer by oxidizing the spacer to form volatile Ge.sub.x Si.sub.y O. Any unvolatilized Ge.sub.x Si.sub.y O may be removed using water. Further, the removal step may be performed using a cleaning solution including ammonium hydroxide.

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K. Koyama et al., "Etching characteristics of Si.sub.1-x Ge.sub.x alloy in ammoniac wet cleaning", Appl. Phys. Lett., 57(21), 2202-2204 (1990).

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