Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-10
2009-08-25
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S514000, C438S595000, C438S710000, C438S780000, C438S943000, C257SE27064, C257SE27108, C257SE21632
Reexamination Certificate
active
07579228
ABSTRACT:
A method for making a semiconductor device is provided, comprising (a) providing a semiconductor structure comprising a first gate electrode (210); (b) forming a first set of organic spacers (213) adjacent to said first electrode; (c) depositing a first photo mask (215) over the structure; and (d) simultaneously removing the first set of organic spacers and the first photo mask.
REFERENCES:
patent: 4838991 (1989-06-01), Cote
patent: 5651857 (1997-07-01), Cronin et al.
patent: 6228747 (2001-05-01), Joyner
patent: 6555442 (2003-04-01), Pai et al.
patent: 6559017 (2003-05-01), Brown et al.
patent: 6699792 (2004-03-01), Wang et al.
patent: 2002/0164847 (2002-11-01), Kim et al.
patent: 2008/0124880 (2008-05-01), Lin et al.
Grudowski Paul A.
Junker Kurt H.
Kropewnicki Thomas J.
Nagy Andrew G.
Estrada Michelle
Fortkor John A.
Fortkort & Houston P.C.
Freescale Semiconductor Inc.
LandOfFree
Disposable organic spacers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Disposable organic spacers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Disposable organic spacers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4077987