Disposable organic spacers

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S514000, C438S595000, C438S710000, C438S780000, C438S943000, C257SE27064, C257SE27108, C257SE21632

Reexamination Certificate

active

07579228

ABSTRACT:
A method for making a semiconductor device is provided, comprising (a) providing a semiconductor structure comprising a first gate electrode (210); (b) forming a first set of organic spacers (213) adjacent to said first electrode; (c) depositing a first photo mask (215) over the structure; and (d) simultaneously removing the first set of organic spacers and the first photo mask.

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patent: 5651857 (1997-07-01), Cronin et al.
patent: 6228747 (2001-05-01), Joyner
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patent: 6559017 (2003-05-01), Brown et al.
patent: 6699792 (2004-03-01), Wang et al.
patent: 2002/0164847 (2002-11-01), Kim et al.
patent: 2008/0124880 (2008-05-01), Lin et al.

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