Disposable gate/replacement gate MOSFETS for sub-0.1 micron gate

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438300, 438305, 438926, H01L 21336

Patent

active

061272329

ABSTRACT:
A counter-doped epitaxial silicon (doped opposite to the substrate type) is used to form the buried layer in a CMOS transistor, while maintaining an abrupt channel profile. Shallow source/drain junctions with abrupt source/drain profiles may be formed using raised (or elevated) source/drain design. The invention encompasses a transistor structure including a doped silicon substrate, and an oppositely-doped epitaxial silicon layer formed on the substrate. A gate is formed on the epitaxial layer, the gate defining a channel region in the epitaxial layer underneath the gate. A layer is formed on the epitaxial silicon layer on opposing sides of, and is electrically isolated from, the gate.

REFERENCES:
patent: 4359816 (1982-11-01), Abbas et al.
patent: 5376578 (1994-12-01), Hsu et al.
patent: 5567966 (1996-10-01), Hwang
patent: 5576227 (1996-11-01), Hsu
patent: 5589410 (1996-12-01), Sato et al.
patent: 5716861 (1998-02-01), Moslehi
patent: 5866459 (1999-02-01), Naem et al.
patent: 6063677 (2000-05-01), Rodder et al.

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