Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-05-03
2011-05-03
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S072000, C257SE29151
Reexamination Certificate
active
07935580
ABSTRACT:
A display substrate includes a gate line, a storage capacitor, a source line, a switching element, a pixel electrode, and a color filter. The gate line is formed on a base substrate. The storage capacitor has a storage line substantially parallel to the gate line. The source line crosses the gate line to define a pixel area. The switching element is connected to the gate line and the source line. The pixel electrode contacts the switching element. The color filter pattern is formed between the base substrate and the pixel electrode such that the color filter pattern contracts the base substrate and the pixel electrode. Thus, the color filter pattern is formed on the display substrate using a three-mask process.
REFERENCES:
patent: 6873382 (2005-03-01), Chang et al.
patent: 7250316 (2007-07-01), Soh
patent: 7315344 (2008-01-01), Lim
Chin Hong-Kee
Choi Seung-Ha
Jeong Yu-Gwang
Kim Joo-Han
Kim Sang-Gab
H.C. Park & Associates PLC
Samsung Electronics Co,. Ltd.
Vu David
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