Display including casing and display unit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C349S038000

Reexamination Certificate

active

07442991

ABSTRACT:
This invention provides a semiconductor device having high operation performance and high reliability. An LDD region707overlapping with a gate wiring is arranged in an n-channel TFT802forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions717, 718, 719and720not overlapping with a gate wiring are arranged in an n-channel TFT804forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group15of the Periodic Table exists in a higher concentration in the LDD region707than in the LDD regions717, 718, 719and720.

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