Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-11
2008-08-05
Nguyen, Tuan H (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S155000, C438S705000
Reexamination Certificate
active
07407853
ABSTRACT:
The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.
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Itoga Toshihiko
Kaitoh Takuo
Kamo Takahiro
Kimura Yasukazu
Oue Eiji
Antonelli, Terry Stout & Kraus, LLP.
Hitachi Displays Ltd.
Nguyen Tuan H
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