Dislocation-specific dielectric mask deposition and lateral...

Details Dislocation-specific dielectric mask deposition and lateral... Dislocation-specific dielectric mask deposition and lateral...

2006-05-05

2008-12-02

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S041000, C438S044000, C438S481000, C257SE21461, C257SE21476, C257SE21562

Reexamination Certificate

active

07459380

ABSTRACT:
In accordance with the present invention, improved methods for reducing the dislocation density of nitride epitaxial films are provided. Specifically, an in-situ etch treatment is provided to preferentially etch the dislocations of the nitride epitaxial layer to prevent threading of the dislocations through the nitride epitaxial layer. Subsequent to etching of the dislocations, an epitaxial layer overgrowth is performed. In certain embodiments, the etching of the dislocations occurs simultaneously with growth of the epitaxial layer. In other embodiments, a dielectric mask is deposited within the etch pits formed at the dislocations prior to the epitaxial layer overgrowth.

REFERENCES:
patent: 2002/0005593 (2002-01-01), Bourret-Courchesne
patent: 2002/0022290 (2002-02-01), Kong et al.
patent: 2005/0124143 (2005-06-01), Roycroft et al.
Huang, et al. “Improvement of InGaN-GaN Light-Emitting Diode Performance With a Nono-Roughened p-GaN Surface”;IEEE Photonics Technology Letters, vol. 17, No. 5, May 2005.
Hiramatsu, et al. “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)”;Journal of Crystal Growth; 2000 Elsevier Science B.V.; 221 (2000) 316-326.

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