Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29268
Reexamination Certificate
active
07928508
ABSTRACT:
A semiconductor structure includes a semiconductor substrate; a first high-voltage well (HVW) region of a first conductivity type overlying the semiconductor substrate; a second HVW region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first HVW region; a gate dielectric extending from over the first HVW region to over the second HVW region; a gate electrode on the gate dielectric; a drain region in the second HVW region; a source region at an opposite side of the gate dielectric than the drain region; and a deep well region of the first conductivity type underlying the second HVW region. Substantially no deep well region is formed directly underlying the drain region.
REFERENCES:
patent: 6168983 (2001-01-01), Rumennik et al.
patent: 6207994 (2001-03-01), Rumennik et al.
patent: 2005/0073007 (2005-04-01), Chen et al.
patent: WO 9820562 (1998-05-01), None
Chiang Puo-Yu
Huang Tsung-Yi
Lin Tsai Chun
Yao Chih-Wen (Albert)
Sengdara Vongsavanh
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Tran Minh-Loan T
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