Directional solid phase crystallization of thin amorphous...

Details Directional solid phase crystallization of thin amorphous... Directional solid phase crystallization of thin amorphous...

2011-07-19

2011-07-19

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S487000, C257SE21133

Reexamination Certificate

active

07981778

ABSTRACT:
Embodiments of the present invention provide a method for converting a doped amorphous silicon layer deposited onto a crystalline silicon substrate into crystalline silicon having the same grain structure and crystal orientation as the underlying crystalline silicon substrate upon which the amorphous silicon was initially deposited. Additional embodiments of the present invention provide depositing a dielectric passivation layer onto the amorphous silicon layer prior to the conversion. A temperature gradient is provided at a temperature and for a time period sufficient to provide a desired p-n junction depth and dopant profile.

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