Directional crystallization of silicon sheets using rapid...

Details Directional crystallization of silicon sheets using rapid... Directional crystallization of silicon sheets using rapid...

2006-12-13

2009-08-04

Kopec, Mark (Department: 1796)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C136S258000, C257S070000, C257S072000, C257S064000, C117S004000, C117S010000, C438S488000, C438S491000

Reexamination Certificate

active

07569462

ABSTRACT:
The present invention provides a method of recrystallizing a silicon sheet, and in particular recrystallizing a small grained silicon sheet to improve material properties such as grain size and orientation. According to one aspect, the method includes using rapid thermal processing (RTP) to melt and recrystallize one or more entire silicon sheet(s) in one heating sequence. According to another aspect, the method includes directionally controlling a temperature drop across the thickness of the sheet so as to facilitate the production of a small number of nuclei in the melted material and their growth into large grains. According to a further aspect, the invention includes a re-crystallization chamber in an overall process flow that enables high-throughput processing of silicon sheets having desired properties for applications such as photovoltaic modules.

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