Direct tunneling memory with separated transistor and tunnel...

Details Direct tunneling memory with separated transistor and tunnel... Direct tunneling memory with separated transistor and tunnel...

2007-08-28

2008-12-09

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S280000, C438S283000, C438S305000, C438S268000, C257SE27103, C257SE29306, C257SE29309

Reexamination Certificate

active

07462539

ABSTRACT:
A semiconductor device has: an isolation region formed on a semiconductor substrate and defining a continuous active region including a select transistor region and a direct tunnel element region; a gate insulating film formed on a channel region of the select transistor region; a tunnel insulating film formed on a partial area of the direct tunnel element region and having a thickness different from a thickness of the gate insulating film; a continuous floating gate electrode formed above the gate insulating film and the tunnel insulating film; an inter-electrode insulating film formed on a surface of the floating gate electrode; a control gate electrode facing the floating gate electrode via the inter-electrode insulating film; and a pair of source/drain regions formed on both sides of the channel region of the select transistor region and not overlapping the tunnel insulating film.

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Tatsuya Usuki et al., “Advantage of a Quasi-Nonvolatile Memory with Ultra Thin Oxide”, Extended Abstract of the 2001 International Conference on Solid State Devices and Material, Tokyo, Japan 2001., pp. 532-533.

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