Direct sensing semiconductor memory device

Details Direct sensing semiconductor memory device Direct sensing semiconductor memory device

2000-01-27

2000-10-03

Dinh, Son T.

Static information storage and retrieval

Read/write circuit

Differential sensing

365208, G11C 700

Patent

active

061282383

ABSTRACT:
A direct sensing type semiconductor memory device combines read and write data bus lines in order to conserve real estate. The memory device includes a bit line pair and a sense amplifier connected between the lines of the bit line pair, and a data line pair. A first transistor is connected between a first potential and one of the data lines of the data line pair, and a gate of the first transistor is connected to one of the bit lines of the bit line pair. A second transistor is connected between the first potential and the other one of the data lines, and its gate is connected to the other of the bit lines. A switch circuit is connected between the data line pair and the bit line pair and transfers data from the data line pair to the bit line pair in accordance with a potential difference between the data line pair and the bit line pair.

REFERENCES:
patent: 5594681 (1997-01-01), Taguchi
patent: 5796666 (1998-08-01), Shirley et al.
patent: 5903502 (1999-05-01), Porter
patent: 6064612 (2000-05-01), Agata
"Non-Precharged Bit-Line Scheme for High-Speed Low-Power DRAMS", Kato et al, 1998 Symposium on VLSI Circuits Digest of Technical Papers, pp. 16-17.

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