Direct bonding of copper to aluminum nitride substrates

Details Direct bonding of copper to aluminum nitride substrates Direct bonding of copper to aluminum nitride substrates

1990-12-24

1995-05-23

Turner, Archene

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 99, 427123, 4271262, 4271263, B05D 512

Patent

active

054180023

ABSTRACT:
A process for direct bonding a copper film to an yttria-doped aluminum nitride substrate comprises treating the substrate by preoxidation at elevated temperature to create an overlying thin film of Al.sub.2 O.sub.3, followed by step cooling to a lower temperature. A copper foil of thickness between 1.0 and 4.0 microns and generally perforated or otherwise foraminous, is eutectically direct bonded to the substrate by the known direct bond copper (DBC) process. The resultant article exhibits high thermal conductivity, low permittivity and high mechanical strength. The peel strength of the copper film on the AlN substrate exceeds the peel strengths previously attainable in the industry.

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Iwase et al., "Thick Film and Direct Bond Copper Forming Technologies for Aluminum Nitride Substrate", Jun. 1985, pp. 253-258 of IEEE Transactions on Components, Hybrids and Manufacturing Technology, vol. CHMT-8 No. 2.
Kuromitsu et al., "Surface Treatment of AlN Substrate", 1989, International Society for Hybrid Microelectronics.

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