Diode structure for SOI circuits

Details Diode structure for SOI circuits Diode structure for SOI circuits

2005-06-14

2005-06-14

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S311000

Reexamination Certificate

active

06905924

ABSTRACT:
In an SOI diode structure, the conventional transistor-like MOS configuration is eliminated by replacing the polysilicon line by a completely dielectric region. This region may be used as an implantation mask to control a dopant gradient of a PN-junction that forms below the dielectric region. Moreover, during the salicide process, the dielectric region prevents the PN-junction from being shorted. Thus, a depletion of the active region caused by the MOS structure may be avoided. Therefore, the functioning of the PN-junction is maintained even for extremely thin semiconductor layers.

REFERENCES:
patent: 4616404 (1986-10-01), Wang et al.
patent: 6103564 (2000-08-01), Masuda
patent: 2002/0063288 (2002-05-01), Maciejewski et al.
patent: 0 923 132 (1999-06-01), None
patent: WO 02/061841 (2002-08-01), None

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