Diode structure and memory device including the same

Details Diode structure and memory device including the same Diode structure and memory device including the same

2011-08-02

2011-08-02

Pert, Evan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S029000, C257S029000, C365S148000, C365S175000

Reexamination Certificate

active

07989791

ABSTRACT:
Provided are a diode structure and a memory device including the same. The diode structure includes: a first electrode; a p-type Cu oxide layer formed on the first electrode; an n-type InZn oxide layer formed on the p-type Cu oxide layer; and a second electrode formed on the n-type InZn oxide.

REFERENCES:
patent: 6258702 (2001-07-01), Nakagawa et al.
patent: 7208372 (2007-04-01), Hsu et al.
patent: 7329915 (2008-02-01), Herman et al.
patent: 2009/0302297 (2009-12-01), Park et al.

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