Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-04-15
1998-12-01
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438130, 438237, 438296, H01L 218236
Patent
active
058438246
ABSTRACT:
A diode-based ROM device and a method for fabricating the same are provided. The ROM device is of the type including an array of diode-based memory cells for permanent storage of binary-coded data therein. In the semiconductor structure of the ROM device, a plurality of insulator-filled trenches are formed for isolation of the diode-based memory cells. This feature allows the prevention of the punch-through effect when the ROM device is downsized. Further, the bit lines for the ROM device are formed with an increased junction depth such that the resistance of the bit lines can be reduced to allow an increase in the magnitude of the currents in the bit lines for easier detection and distinguishing of the binary state the currents represent. In accordance with the method, the mask-programming process can be easily implemented by forming contact windows at predetermined locations that are associated with the memory cells that are to be set to a permanently-ON state, and then doping an impurity material through the contact windows into an upper portion of the associated bit lines to form a junction diode thereon. The memory cells that are not formed with diodes are set to a permanently-OFF state.
REFERENCES:
patent: 4694566 (1987-09-01), Conner et al.
patent: 5441907 (1995-08-01), Sung et al.
patent: 5470774 (1995-11-01), Kunitou
Chou Jih-Wen
Wen Jemmy
Chaudhari Chandra
United Microelectronics Corp.
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