Diode array architecture for addressing nanoscale resistive...

Details Diode array architecture for addressing nanoscale resistive... Diode array architecture for addressing nanoscale resistive...

2006-04-25

2006-04-25

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S046000, C365S148000

Reexamination Certificate

active

07035141

ABSTRACT:
The present memory structure includes thereof a first conductor, a second conductor, a resistive memory cell connected to the second conductor, a first diode connected to the resistive memory cell and the first conductor, and oriented in the forward direction from the resistive memory cell to the first conductor, and a second diode connected to the resistive memory cell and the first conductor, in parallel with the first diode, and oriented in the reverse direction from the resistive memory cell to the first conductor. The first and second diodes have different threshold voltages.

REFERENCES:
patent: 6937528 (2005-08-01), Hush et al.

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