Dimple elimination in a tungsten etch back process by reverse im

Details Dimple elimination in a tungsten etch back process by reverse im Dimple elimination in a tungsten etch back process by reverse im

1997-01-27

1999-11-09

Whitehead, Jr, Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438648, 438675, H01L 21283

Patent

active

059813857

ABSTRACT:
A new method of metallization using a dimple free tungsten plug is described. An insulating layer is deposited overlying semiconductor device structures. An opening is etched through the insulating layer to contact one of the semiconductor device structures. A layer of tungsten is deposited overlying the insulating layer and within the opening. A photoresist block is formed on the tungsten layer over the contact opening. The photoresist block is a reverse pattern of the photoresist layer used to define the opening in the insulating layer. The tungsten layer is partially etched forming a mound in the tungsten layer under the photoresist block and over the opening. The photoresist block is removed and the remaining tungsten layer is etched again resulting in the formation of a dimple free tungsten plug with a planar surface.

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