Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-04-26
2005-04-26
Versteeg, Steven (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192150
Reexamination Certificate
active
06884329
ABSTRACT:
A method of filling copper into a high-aspect ratio via by a plasma sputter process and allowing the elimination of electrochemical plating. In one aspect of the invention, the sputtering is divided into a first step performed at a low temperature of no more than 100° C. and with at least portions of high wafer bias, thereby filling a lower half of the hole, and a second step performed at a higher temperature, e.g., at least 200° C. and with at least portions of low wafer bias to complete the hole filling. In another aspect of the invention, diffusion promoting gas such as hydrogen is added to the copper sputter plasma. In still another aspect, copper sputtering, even in the final fill phase, is performed through multiple cycles of low-level and high-level pedestal bias to deposit copper on exposed corners and to sputter from the corners.
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Chen Fusen
Fu Jianming
Gopalraja Praburam
Subramani Anantha K.
Wang Wei D.
Applied Materials Inc.
Guenzer Charles S.
Versteeg Steven
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