Diffusion barriers comprising a self-assembled monolayer

Details Diffusion barriers comprising a self-assembled monolayer Diffusion barriers comprising a self-assembled monolayer

2007-04-10

2007-04-10

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S687000, C427S304000, C427S305000

Reexamination Certificate

active

10809317

ABSTRACT:
The present invention provides a method for forming a diffusion barrier layer, a diffusion barrier in an integrated circuit and an integrated circuit. The method for forming a diffusion barrier involves the following steps: 1) preparing a silicon substrate; 2) contacting the silicon substrate with a composition comprising self-assembled monolayer subunits and a solvent; and, 3) removing the solvent. The diffusion barrier layer includes a self-assembled monolayer. The integrated circuit includes a silicon substrate, a diffusion barrier layer and a metal deposited on the diffusion barrier layer. The diffusion barrier layer in the integrated circuit is covalently attached to the silicon substrate and includes a self-assembled monolayer.

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