Diffusion barrier for polysilicon gate electrode of MOS device i

Details Diffusion barrier for polysilicon gate electrode of MOS device i Diffusion barrier for polysilicon gate electrode of MOS device i

1997-03-13

1998-11-17

Chaudhari, Chandra

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438653, 438657, H01L 21425

Patent

active

058375988

ABSTRACT:
A uniformly doped polysilicon gate electrode of an MOS device forming a part of an integrated circuit structure on a semiconductor substrate is formed by first depositing a very thin layer of amorphous or polycrystalline silicon, e.g., from about 2 nm to about 10 nm, over a gate oxide layer. The thin layer of silicon layer is then exposed to a nitrogen plasma formed from N.sub.2 at a power level sufficient to break the silicon--silicon bonds in the thin layer of silicon, but insufficient to cause sputtering of the silicon to cause a barrier layer of silicon and nitrogen to form at the surface of the thin silicon layer. Further silicon, e.g., polysilicon, is then deposited over the barrier layer to the desired thickness of the polysilicon gate electrode. The gate electrode is then conventionally doped, i.e., by implantation followed by furnace annealing, to diffuse and activate the dopant in the polysilicon gate electrode without, however, resulting in penetration of the dopant through the barrier layer into the underlying gate oxide layer or the semiconductor substrate.

REFERENCES:
patent: 4897368 (1990-01-01), Kobushi et al.
patent: 5567638 (1996-10-01), Lin et al.
patent: 5712181 (1998-01-01), Byun et al.

Affiliated with

Also associated with

Rating

Diffusion barrier for polysilicon gate electrode of MOS device i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Diffusion barrier for polysilicon gate electrode of MOS device i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diffusion barrier for polysilicon gate electrode of MOS device i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-884015