4. Semiconductor device manufacturing: process
  5. Introduction of conductivity modifying dopant into...
  6. Ion implantation of dopant into semiconductor region

Jon Owyang

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Diffusion barrier for polysilicon gate electrode of MOS device i

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
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Process for forming re-entrant geometry for gate electrode of in

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
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Profile ID: LFUS-PAI-P-1072729

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