Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-29
2009-06-09
Menz, Douglas M (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S582000, C438S682000, C257SE21211, C257SE21370
Reexamination Certificate
active
07544576
ABSTRACT:
A semiconductor fabrication method includes forming a gate module overlying a substrate. Recesses are etched in the substrate using the gate module as a mask. A barrier layer is deposited over the wafer and anisotropically etched to form barrier “curtains” on sidewalls of the source/drain recesses. A metal layer is deposited wherein the metal layer contacts a semiconductor within the recess. The wafer is annealed to form a silicide selectively. The diffusivity of the metal with respect to the barrier structure material is an order of magnitude less than the diffusivity of the metal with respect to the semiconductor material. The etched recesses may include re-entrant sidewalls. The metal layer may be a nickel layer and the barrier layer may be a titanium nitride layer. Silicon or silicon germanium epitaxial structures may be formed in the recesses overlying the semiconductor substrate.
REFERENCES:
patent: 6037605 (2000-03-01), Yoshimura
patent: 6483158 (2002-11-01), Lee
patent: 6541343 (2003-04-01), Murthy et al.
patent: 6566680 (2003-05-01), Krivokapic
patent: 6812103 (2004-11-01), Wang et al.
patent: 6887762 (2005-05-01), Murthy et al.
patent: 7078205 (2006-07-01), Bandaru et al.
patent: 7078285 (2006-07-01), Suenaga
patent: 7195985 (2007-03-01), Murthy et al.
patent: 2004/0072446 (2004-04-01), Liu et al.
patent: 2006/0115949 (2006-06-01), Zhang et al.
Gambino et al., “Silicides and ohmic contacts”, Materials Chemistry and Physics, 52 (1998) 99-146.
Kuztenov et al., “Nickel atomic diffusion in amorphous silicon”, App. Physi. Lett.; 66 (17), Apr. 24, 1995.
Qu et al., “Investigation on Ni reaction with sputtered amorphous SiGe thin film on SiO2 substrate”, J. Vac. Sci. Technol. A, 24(1), Jan./Feb. 2006.
Spit et al., Diffusivity and Solubility of Ni (63Ni) in Monocrystalline Si, PRB, 1988, pp. 1255-1260, vol. 39, No. 3.
Nowak et al., Diffusion of Nickel Through Titanium Nitride Films, JVSTA, Nov./Dec. 1985, p. 2242-2245,vol. 3, No. 6.
Jawarani Dharmesh
Liu Chun-Li
Orlowski Marius K.
Freescale Semiconductor Inc.
Menz Douglas M
Such Matthew W
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