Diffusion barrier and adhesion layer for an interconnect...

Details Diffusion barrier and adhesion layer for an interconnect... Diffusion barrier and adhesion layer for an interconnect...

2008-09-30

2011-11-15

Andujar, Leonardo (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23010, C257S753000, C257S754000, C257S758000

Reexamination Certificate

active

08058728

ABSTRACT:
An interconnect structure is provided. The interconnect structure includes an interconnect opening formed within a dielectric material, a diffusion barrier on the dielectric material, where the diffusion barrier contains a compound from a thermal reaction between cobalt (Co) metal from at least a portion of a cobalt metal layer formed on the dielectric material and a dielectric reactant element from the dielectric material. The interconnect structure further includes a cobalt nitride adhesion layer in the interconnect opening, and a Cu metal fill in the interconnect opening, wherein the diffusion barrier and the cobalt nitride adhesion layer surround the Cu metal fill within the interconnect opening.

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