Differential read-out circuit for fuse memory cells

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

Reexamination Certificate

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Details

C365S154000, C365S225700, C327S525000

Reexamination Certificate

active

07403432

ABSTRACT:
A read-out circuit is disclosed, where the circuit reads information out of a memory unit comprising two non-volatile memory cells. The cells have different programming states, and the memory information of the memory unit is given by the programming states of the two memory cells. The read-out circuit has a volatile signal memory, the inputs of which are connected to the read outputs of the memory cells.

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“Halbleiter-Schaltungstechnik” (“Semiconductor Circuitry” ) U. Tietze and Ch. Schenk, Springer Verlag, Berlin, 12thEdition, 2002, p. 639.

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