Differential amplifier having unilateral field effect transistor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438286, 438304, H01L 21336

Patent

active

058113410

ABSTRACT:
A differential amplifier (10) includes three unilateral field effect transistors (12, 14, 16) formed in a common well (40) of a semiconductor material. Each of the three unilateral field effect transistors (12, 14, 16) has an asymmetric channel doping profile. The performance of the differential amplifier (10) is significantly improved by properly orienting the three unilateral field effect transistors (12, 14, 16).

REFERENCES:
patent: 5061647 (1991-10-01), Roth et al.
patent: 5372960 (1994-12-01), Davies et al.
patent: 5427964 (1995-06-01), Kaneshiro et al.
patent: 5441906 (1995-08-01), Burger
patent: 5545575 (1996-08-01), Cheng et al.
patent: 5612244 (1997-03-01), Davies et al.
"Field Effect-Transistor with Asymmetrical Structure", Codella et al., United States Statutory Invention Registration Number H986, Published Nov. 5, 1991, U.S. Class 438, Subclass 286, Application Filing Date Jun. 9, 1989.

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