Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-12-09
1998-09-22
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438286, 438304, H01L 21336
Patent
active
058113410
ABSTRACT:
A differential amplifier (10) includes three unilateral field effect transistors (12, 14, 16) formed in a common well (40) of a semiconductor material. Each of the three unilateral field effect transistors (12, 14, 16) has an asymmetric channel doping profile. The performance of the differential amplifier (10) is significantly improved by properly orienting the three unilateral field effect transistors (12, 14, 16).
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patent: 5427964 (1995-06-01), Kaneshiro et al.
patent: 5441906 (1995-08-01), Burger
patent: 5545575 (1996-08-01), Cheng et al.
patent: 5612244 (1997-03-01), Davies et al.
"Field Effect-Transistor with Asymmetrical Structure", Codella et al., United States Statutory Invention Registration Number H986, Published Nov. 5, 1991, U.S. Class 438, Subclass 286, Application Filing Date Jun. 9, 1989.
Davies Robert B.
Wild Andreas A.
Chaudhari Chandra
Dover Rennie William
Motorola Inc.
Zhou Ziye
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