Dielectric structure in nonvolatile memory device and method...

Details Dielectric structure in nonvolatile memory device and method... Dielectric structure in nonvolatile memory device and method...

2005-11-02

2010-06-22

Trinh, Hoa B (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C257SE21176

Reexamination Certificate

active

07741170

ABSTRACT:
A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film includes one selected from materials with a dielectric constant of approximately 9 or higher and a compound of at least two of the materials; and a second oxide layer formed on the first high-k dielectric film.

REFERENCES:
patent: 6645805 (2003-11-01), Kil
patent: 6803272 (2004-10-01), Halliyal et al.
patent: 6885056 (2005-04-01), Dornisch et al.
patent: 10-2003-0050678 (2003-06-01), None
patent: 10-2004-0059800 (2004-07-01), None
Notice of Preliminary Rejection from the Korean Intellectual Property Office, dated Jan. 31, 2007, in counterpart Korean Patent Application No. 2005-0056952.

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