Dielectric spacer removal

Details Dielectric spacer removal Dielectric spacer removal

2011-04-05

2011-04-05

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S304000, C438S305000, C438S306000, C438S592000, C257S316000, C257S320000, C257S387000, C257SE21202, C257SE21205, C257SE21444

Reexamination Certificate

active

07919379

ABSTRACT:
The present invention relates to semiconductor devices, and more particularly to a process and structure for removing a dielectric spacer selective to a surface of a semiconductor substrate with substantially no removal of the semiconductor substrate. The method of the present invention can be integrated into a conventional CMOS processing scheme or into a conventional BiCMOS processing scheme. The method includes forming a field effect transistor on a semiconductor substrate, the FET comprising a dielectric spacer and the gate structure, the dielectric spacer located adjacent a sidewall of the gate structure and over a source/drain region in the semiconductor substrate; depositing a first nitride layer over the FET; and removing the nitride layer and the dielectric spacer selective to the semiconductor substrate with substantially no removal of the semiconductor substrate.

REFERENCES:
patent: 6372589 (2002-04-01), Yu
patent: 7271049 (2007-09-01), Gluschenkov et al.
patent: 7494885 (2009-02-01), Pelella et al.

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