Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2008-01-29
2008-01-29
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Reexamination Certificate
active
07323422
ABSTRACT:
High dielectric constant (high-k) materials are formed directly over oxidation-susceptible conductors such as silicon. A discontinuous layer is formed, with gaps between grains of the high-k material. Exposed conductor underneath the grain boundaries is oxidized or nitridized to form, e.g., silicon dioxide or silicon nitride, when exposed to oxygen or nitrogen source gases at elevated temperatures. This dielectric growth is preferential underneath the grain boundaries such that any oxidation or nitridation at the interface between the high-k material grains and covered conductor is not as extensive. The overall dielectric constant of the composite film is high, while leakage current paths between grains is reduced. Ultrathin high-k materials with low leakage current are thereby enabled.
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Semiconductor Manufacturing Technology; Copyright 2001; pp. 236-237, 275-277; by Michael Quirk and Julian Serda.
Maes Jan Willem
Raaijmakers Ivo
Soininen Pekka J.
ASM International N.V.
Harrison Monica D.
Jr. Carl Whitehead
Knobbe Martens Olson & Bear LLP
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