Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2006-09-26
2006-09-26
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S785000, C438S786000, C257SE21150, C257SE21160
Reexamination Certificate
active
07112539
ABSTRACT:
A multi-layer dielectric layer structure for a semiconductor device. The multi-layer dielectric layer structure comprises a silicate interface layer having a dielectric constant greater than that of silicon nitride and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises one or more ordered pairs of first and second layers. With the present invention, the dielectric constant of the high-k dielectric layer can be optimized while improving interface characteristics. With a higher crystallization temperature realized by forming the multi-layer structure, each of whose layers is not more than the critical thickness, leakage current can be reduced, thereby improving device performance.
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Lee Jong-ho
Lee Nae-In
Everhart Caridad
Marger & Johnson & McCollom, P.C.
Samsung Electronic Co. Ltd.
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