Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-02
2011-08-02
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S216000, C438S287000, C257S189000, C257SE21398, C257SE21386, C257SE21451
Reexamination Certificate
active
07989280
ABSTRACT:
A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.
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Blackwell James M.
Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Sarkar Asok K
Slutsker Julia
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