Dielectric interconnect structures and methods for forming...

Details Dielectric interconnect structures and methods for forming... Dielectric interconnect structures and methods for forming...

2006-03-27

2008-10-14

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S513000, C438S598000, C438S692000, C257SE21170, C257SE21006, C257SE21267, C257SE21218, C257SE21304

Reexamination Certificate

active

07435674

ABSTRACT:
Dielectric interconnect structures and methods for forming the same are provided. Specifically, the present invention provides a dielectric interconnect structure having a noble metal layer (e.g., Ru, Ir, Rh, Pt, RuTa, and alloys of Ru, Ir, Rh, Pt, and RuTa) that is formed directly on a modified dielectric surface. In a typical embodiment, the modified dielectric surface is created by treating an exposed dielectric layer of the interconnect structure with a gaseous ion plasma (e.g., Ar, He, Ne, Xe, N2, H2, NH3, and N2H2). Under the present invention, the noble metal layer could be formed directly on an optional glue layer that is maintained only on vertical surfaces of any trench or via formed in the exposed dielectric layer. In addition, the noble metal layer may or may not be provided along an interface between the via and an internal metal layer.

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