Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-12-16
1998-09-22
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257396, 257640, 257752, H01L 2978
Patent
active
058118659
ABSTRACT:
A method is provided for forming an improved device dielectric of a semiconductor integrated circuit, and an integrated circuit formed according to the same. For scaling geometries for use in the submicron regime, a composite dielectric layer used as a device dielectric is formed over a plurality of active areas adjacent to a field oxide region. The composite dielectric layer is formed before the field oxide region is formed and comprises a non-porous silicon nitride layer. The non-porous silicon nitride layer preferably comprises a thin deposited silicon nitride layer overlying a thin nitridized region of the substrate. The silicon nitride layer is partially oxidized during the subsequent formation of a field oxide region between the plurality of active areas. An oxide layer may be formed over the silicon nitride layer before the formation of the field oxide region which will then be densified during the field oxide formation. The composite dielectric layer is then patterned and etched to form the dielectric portion of various integrated circuit devices.
REFERENCES:
patent: 3520722 (1970-07-01), Scott, Jr.
patent: 3745647 (1973-07-01), Boleky, III
patent: 3861968 (1975-01-01), Magdo et al.
patent: 4101344 (1978-07-01), Kooi et al.
patent: 4373248 (1983-02-01), McElroy
patent: 4506437 (1985-03-01), Godejahn, Jr.
patent: 4551910 (1985-11-01), Patterson
patent: 4593453 (1986-06-01), Tam et al.
patent: 4713356 (1987-12-01), Hiruta
patent: 4764248 (1988-08-01), Bhattacherjee et al.
patent: 5258333 (1993-11-01), Shappir et al.
patent: 5258643 (1993-11-01), Cohen
patent: 5449640 (1995-09-01), Hunt et al.
patent: 5489790 (1996-02-01), Lage
Tombs et al, "A New Insulated-Gate Silicon Transistor," Proceedings of the IEEE, pp. 87-88, (1966).
Peter Van Zant, Microchip Fabrication (McGraw-Hill Publishing Co. 1990), pp. 143-144.
Wolf et al, Silicon Processing for the VLSI Era, vol. 1: Process Technology (Lattice Press 1986), pp. 57-58.
Wolf et al, Silicon Processing for the VLSI Era, vol. 2: Process Integration (Lattice Press), p. 21.
Runyan et al, Semiconductor Integrated Circuit Processing Technology (Addison-Wesley 1990), p. 147.
S. M. Sze, "Physics of Semiconductor Devices," 1981, pp. 374, 378-379, 441.
Bryant Frank R.
Hodges Robert L.
Galanthay Theodore E.
Guay John F.
Hill Kenneth C.
Jackson Jerome
Jorgenson Lisa K.
LandOfFree
Dielectric in an integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dielectric in an integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric in an integrated circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1624981