Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Patent
1991-06-25
1998-04-28
Nguyen, Nam
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
427574, 427579, 427 9, 156345PW, 118728, 438788, H01L 2102
Patent
active
057444030
ABSTRACT:
Dielectric layers comprising a silicon oxide and having essentially constant thickness across a wafer are produced by a plasma-deposition method; in preferred processing, a wafer is supported on a surface which extends significantly past the edge of the wafer. Resulting layers may be further processed by localized etching of windows or vias, uniform layer thickness being particularly beneficial, when timed etching is used, to ensure uniformity of etched openings.
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Dein Edward Alan
Gross Michael Douglas
Pudliner Richard Allen
Alanko Anita
Lucent Technologies - Inc.
Nguyen Nam
Rehberg John T.
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