Dielectric film deposition employing a bistertiarybutylaminesila

Details Dielectric film deposition employing a bistertiarybutylaminesila Dielectric film deposition employing a bistertiarybutylaminesila

1999-05-28

2000-11-28

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

427255394, 42725529, C23C 1630

Patent

active

061532614

ABSTRACT:
A method and an apparatus for increasing a deposition rate of dielectric films deposited on a substrate for a given temperature while providing the same with good step coverage and gap-fill properties. This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon.

REFERENCES:
patent: 4822830 (1989-04-01), Adkins
patent: 5492736 (1996-02-01), Laxman et al.
patent: 5744196 (1998-04-01), Laxman et al.
patent: 5874368 (1999-02-01), Laxman et al.
Ravi K. Laxman et al. Low Temperature LPCVD Silicon Nitride Using a Chlorine-Free Organosilicon Precursor International VLSI Multilevel Interconnection Conference, 1998; 15.sup.th p. 568-573.

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