Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-09-10
2011-11-08
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S294000, C438S761000, C438S785000
Reexamination Certificate
active
08053311
ABSTRACT:
The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.
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Kitano Naomu
Nakagawa Takashi
Tatsumi Toru
Brewster William M.
Canon Anelva Corporation
Fitzpatrick ,Cella, Harper & Scinto
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