Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2005-11-24
2010-02-09
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S126000, C365S175000, C365S243000
Reexamination Certificate
active
07660180
ABSTRACT:
A thermally programmable memory has a programmable element (20) of a thermally programmable resistance preferably of phase change material, material and a blown antifuse (80) located adjacent to the programmable material. Such a blown antifuse has a dielectric layer (100) surrounded by conductive layers (90, 110) to enable a brief high voltage to be applied across the dielectric to blow a small hole in the dielectric during manufacture to form a small conductive path which can be used as a tiny electrical heater for programming the material. Due to the current confinement by the hole, the volume of the material that must be heated in order to switch to a highly-resistive state is very small. As a result the programming power can be low.
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Agarwal Prabhat
Attenborough Karen
Boeve Hans M. B.
Huizing Hendrik G. A.
Hurkx Godefridus A. M.
Le Thong Q
NXP B.V.
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