Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1995-06-07
1997-10-07
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566361, 1566431, 216 79, 216 81, 437228, H01L 21306
Patent
active
056743556
ABSTRACT:
The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relates to a method for forming an integrated structure and to the integrated structure produced therefrom. The present invention further provides a method for selectively ion etching a diamond-like carbon layer from a substrate containing such a layer.
REFERENCES:
patent: 4617193 (1986-10-01), Wu
patent: 4648938 (1987-03-01), Ashby et al.
patent: 4671852 (1987-06-01), Pyke
patent: 4885614 (1989-12-01), Furukawa et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4975144 (1990-12-01), Yamasaki et al.
patent: 4987007 (1991-01-01), Wagal et al.
patent: 5064809 (1991-11-01), Hed
patent: 5082359 (1992-01-01), Kirkpatrick
patent: 5082522 (1992-01-01), Purdes et al.
patent: 5087434 (1992-02-01), Frenklach et al.
patent: 5087959 (1992-02-01), Omori et al.
patent: 5126206 (1992-06-01), Garg et al.
patent: 5186973 (1993-02-01), Garg et al.
patent: 5221870 (1993-06-01), Nakahata et al.
patent: 5246884 (1993-09-01), Jaso et al.
patent: 5266409 (1993-11-01), Schmidt et al.
patent: 5474816 (1995-12-01), Falabella
Aisenberg et al., "Ion-Beam Deposition of Thin Films of Diamondlike Carbon", J. of Appl. Phys., vol. 42, No. 7, pp. 2953-2958 (1971).
Grill et al., "Diamondlike carbon films by rf plasma-assisted chemical vapor deposition from acetylene", J. of Res. and Develop., vol. 34, No. 6, pp. 849-857 (1990).
Grill et al., "Diamondlike Carbon Deposited by DC PACVD", Diamond Films and Techn., vol. 1, No. 4, pp. 219-233 (1992).
IBM Technical Disclosure Bulletin, vol. 35, No. 1B, Jun. 1992, New York, U.S., p. 211.
Patent Abstracts of Japan (P-1272) vol. 015, No. 435, Nov. 6, 1991 and JP-A-03 181917 (Ricoh Co Ltd), Aug. 7, 1991 (Abstract).
Bachmann et al, Diamond, Diamond-like and related coatings, Diamond and Rel. Mat. vol. 1, Elsevier Sci. Pub., pp. 277-280, 364-368, 546-548, 553-557, 570-571 1992.
Jackman et al, Diamond and Rel. Mat. vol. 1, pp. 895-899 1992.
Neto et al., "Production and characterization of hard silicon-implanted carbon films" Congr. Anu.-Assoc. Bras. Metal. Mater. 48th (vol. 2) pp. 17-35, (Portuguese article) 1993.
Sullivan et al., Mat. Res. Soc. Smp. Proc. vol. 381, pp. 273-278 1995.
Youde et al., Vacuum: Tech. Appl. and Ion Phys., vol. 42, No. 16, p. 1084 1991.
IBM Tech. Discl. Bull. vol. 35, No. 1B, pp. 211-213 Jun. 1992.
Kapoor et al., J. Vac. Sci. Technol. A, vol. 4, No. 3, pp. 1013-1017 May 1986.
Cohen Stephan Alan
Edelstein Daniel Charles
Grill Alfred
Paraszczak Jurij Rostyslav
Patel Vishnubhai Vitthalbhai
Alanko Anita
Breneman R. Bruce
International Business Machines Corp.
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