Diamond film deposition by ECR CVD using a catalyst gas

Details Diamond film deposition by ECR CVD using a catalyst gas Diamond film deposition by ECR CVD using a catalyst gas

1991-08-19

1993-02-02

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427122, 427249, 4272551, 427575, 427577, 423446, 428408, B05D 306, B05D 314, C23C 1626

Patent

active

051836858

ABSTRACT:
Diamond films can be formed on a surface by virtue of a microwave energy. A catalyst gas is introduced into a reaction chamber for ECR CVD, along with a carbon compound gas. The catalyst gas consists of a gaseous compound of nickel, germanium and/or manganese such as NiH.sub.2 NiF, NiO, NiF(H.sub.2 O)n (where n=1.3), Ni(CN).sub.2, Ni(C.sub.5 H.sub.5).sub.2, GeH.sub.4, GeF.sub.4, manganese carboxyl, MnF.sub.2 and so forth.

REFERENCES:
patent: 4871581 (1989-10-01), Yamazaki
Kawarada et al, "Large area chemical vapor deposition of diamond particles and films using magneto-microwave plasma" Jpn. J. Appl. Phys. 26(6) Jun. 1987 L1032-L1034.

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