Diagonal deep well region for routing body-bias voltage for...

Details Diagonal deep well region for routing body-bias voltage for... Diagonal deep well region for routing body-bias voltage for...

2007-05-01

2007-05-01

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C257S371000

Reexamination Certificate

active

11199896

ABSTRACT:
Diagonal deep well region for routing the body-bias voltage for MOSFETS in surface well regions is provided and described.

REFERENCES:
patent: 5447876 (1995-09-01), Moyer et al.
patent: 6048746 (2000-04-01), Burr
patent: 6087892 (2000-07-01), Burr
patent: 6091283 (2000-07-01), Murgula et al.
patent: 6169310 (2001-01-01), Kalnitsky et al.
patent: 6218708 (2001-04-01), Burr
patent: 6218895 (2001-04-01), De et al.
patent: 6303444 (2001-10-01), Burr
patent: 6489224 (2002-12-01), Burr
patent: 6617656 (2003-09-01), Lee et al.
patent: 6677643 (2004-01-01), Iwamoto et al.
patent: 6936898 (2005-08-01), Pelham et al.
patent: 2001/0028577 (2001-10-01), Sung et al.
patent: 2006/0102958 (2006-05-01), Masleid
patent: 0624909 (1994-11-01), None

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