Devices for detecting current leakage between deep trench...

Details Devices for detecting current leakage between deep trench... Devices for detecting current leakage between deep trench...

2008-03-25

2008-03-25

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S301000, C257SE27092, C438S018000, C438S243000, C365S201000

Reexamination Certificate

active

10979609

ABSTRACT:
A test device for detecting current leakage between deep trench capacitors in DRAM devices. The test device is disposed in a scribe line region of a wafer. In the test device, a first trench capacitor pair has a first deep trench capacitor and a second deep trench capacitor connected in parallel. A first transistor has a first terminal electrically coupled to the first deep trench capacitor and a control terminal electrically coupled to a first word line. A second transistor has a first terminal electrically coupled to the second deep trench capacitor and a control terminal electrically coupled to a second word line. First and second bit lines are electrically coupled to the first and second transistors respectively. The first and second bit lines are separated and the first and second word lines are perpendicular to the bit line regions.

REFERENCES:
patent: 6339228 (2002-01-01), Iyer et al.
patent: 6617180 (2003-09-01), Wang
patent: 2004/0017710 (2004-01-01), Chang et al.
patent: 2004/0033634 (2004-02-01), Wu et al.
patent: 2004/0061110 (2004-04-01), Felber et al.
patent: 2004/0061112 (2004-04-01), Felber et al.
patent: 2004/0069989 (2004-04-01), Wu et al.
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