Devices and methods of preventing plasma charging damage in...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers

Reexamination Certificate

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C438S622000

Reexamination Certificate

active

11027049

ABSTRACT:
Methods for protecting semiconductor devices from plasma charging damage are disclosed. An example disclosed method includes depositing an etching stop layer on a substrate with at least one predetermined structure; depositing a premetallic dielectric layer and a charge preservation layer on the entire surface of the etching stop layer; depositing an insulating layer on the surface of the resulting structure; and forming an metallic interconnect on the insulating layer.

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patent: 2005/0067702 (2005-03-01), America et al.

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