Device with gaps for capacitance reduction

Details Device with gaps for capacitance reduction Device with gaps for capacitance reduction

2005-11-30

2009-02-03

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S597000, C438S738000, C438S711000

Reexamination Certificate

active

07485581

ABSTRACT:
A method for reducing capacitances between semiconductor devices is provided. A plurality of contact structures is formed in a dielectric layer. A mask is formed to cover the contact structures wherein the mask has mask features for exposing parts of the dielectric layer wherein the mask features have widths. The widths of the mask features are shrunk with a sidewall deposition. Gaps are etched into the dielectric layer through the sidewall deposition. The gaps are closed to form pockets in the gaps.

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