Device with asymmetrical channel dopant profile

Details Device with asymmetrical channel dopant profile Device with asymmetrical channel dopant profile

1997-03-31

2000-02-15

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438386, H01L 218242

Patent

active

060252243

ABSTRACT:
A method for fabricating a bit line junction in a DRAM array device which improves the doping profile in the channel region. The method includes contradoping via ion implantation through the bit line contact opening made in the device during processing. This particular doping method increases the concentration of dopants in the channel region on the bit line side of the array, without a corresponding increase of dopants on the buried strap side. Such a doping profile results in an improvement in the off current behavior of the device. Depending on the aspect ratio of the contact opening, tilt angles for the ion implantation are possible and can be adjusted for maximum off current efficiency.

REFERENCES:
patent: 5334862 (1994-08-01), Manning et al.
patent: 5342797 (1994-08-01), Sapp et al.
patent: 5360749 (1994-11-01), Anjum et al.
patent: 5508215 (1996-04-01), Jeng
patent: 5512498 (1996-04-01), Okamoto

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